Phase Change Memory (PCM) التكنولوجيا–one of the new forms of faster, smaller, and denser memory chips destined to replace flash–has been on the table for a while now. Now IBM has come up with a breakthrough making PCM data transfer “instantaneous” and 100 times faster than flash memory.
IBM scientists in Zurich came to these new breakthroughs for their PCM chips while solving two major problems with the architecture. PCMs work by using a specialized alloy that can change its physical state, between a low-resistance crystalline to a high-resistance amorphous phase, by applying voltage.
When the resistance of the chip goes up the chip can store multiple bits of data over the one bit that flash can handle. Combine this with a write latency of 10 microseconds and PCM performs 100 times better than flash.
من خلال آي بي إم من الجيل المقبل من الذاكرة 100 مرات أسرع من فلاش | يجريها.
